In a significant stride towards technological autonomy and military prowess, the Defence Research and Development Organisation (DRDO) has announced a breakthrough in semiconductor technology. The Solid State Physics Laboratory (SSPL), a premier DRDO research facility, has successfully developed indigenous processes for the production of 4-inch Silicon Carbide (SiC) wafers and the fabrication of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power capabilities up to 150W, as well as Monolithic Microwave Integrated Circuits (MMICs) with power outputs up to 40W, suitable for applications operating at X-band frequencies.
This achievement is not just a technological milestone but also a strategic one, aligning with India’s ‘Aatmanirbhar Bharat’ initiative aimed at fostering self-reliance in critical technologies. The GaN/SiC technology, known for its superior efficiency, reduced size and weight, and enhanced performance, plays a vital role in the next-generation defense systems, radars, electronic warfare, and even in the burgeoning field of green technology.
Defence Minister Rajnath Singh praised the efforts of SSPL, stating, “This development is a testament to our resolve towards making India a self-sufficient nation in defense technology. It not only enhances our strategic capabilities but also opens up new avenues in the global semiconductor market for Indian industries.”
Analysts suggest that this move could position India as a competitive player in the global semiconductor landscape, particularly in the niche but growing field of wide-band gap semiconductors like SiC and GaN. This technology is pivotal for high-power, high-frequency applications where traditional silicon-based components fall short.
The development of these indigenous semiconductor technologies by DRDO not only marks a significant achievement in India’s defense technology landscape but also underscores the nation’s commitment to technological advancement and self-reliance.